电浆化学气相沉积、溅镀与蚀刻-Plasma-CVD–Sputtering-and-Etching—Principles-and-Technology

电浆化学气相沉积、溅镀与蚀刻-Plasma-CVD--Sputtering-and-Etching---Principles-and-Technology-学行智库
电浆化学气相沉积、溅镀与蚀刻-Plasma-CVD–Sputtering-and-Etching—Principles-and-Technology
此内容为付费资源,请付费后查看
¥金币12¥金币18
付费资源

第1页 / 共101页

第2页 / 共101页

第3页 / 共101页
试读已结束,还剩98页,您可下载完整版后进行离线阅读
© 版权声明
THE END
Plasma SchematioA partially ionized gascreated by application of anelectric field.Positiveneutralsion/electron pairs areglow(radicals,unreacted gas)Sheathcreated by ionizationdischargeions(dark space)reactions,maintainingoverall charge neutral.electronsSubstrateCommonly,radio-frequency(rf)at 13.56 MHz is used tocreate the glow discharge.charged particlesare accelerated byTypical pressures arethe electric fieldbetween 1 mtorr and 5 torr.
喜欢就支持一下吧
点赞14 分享
评论 抢沙发

请登录后发表评论

    暂无评论内容